Semiconductor structure and forming method thereof

The invention provides a semiconductor structure and a forming method thereof, the semiconductor structure comprises an SOI substrate, the SOI substrate comprises a plurality of device regions and a cutting channel region surrounding each device region, and the SOI substrate further comprises a first dielectric layer; the second dielectric layer is located on the surface of the first dielectric layer, the first waveguide structure is located in the second dielectric layer, part of the first waveguide structure is located in the cutting channel area, and light paths of any adjacent device areas are communicated through the first waveguide structure of the cutting channel area. The invention provides a semiconductor structure and a forming method thereof. Full-chip optical interconnection is realized through a first waveguide structure arranged in a cutting channel region, and device delay and power consumption are reduced. 本申请提供半导体结构及其形成方法，所述半导体结构包括：SOI衬底，所述SOI衬底包括若干器件区和包围每个器件区的切割道区，所述SOI衬底上还包括第一介质层；位于所述第一介质层表