Semiconductor device

The embodiment of the invention provides a semiconductor device, which is characterized in that a plurality of grooves are arranged in an epitaxial layer, and a first grid electrode, a source electrode and a second grid electrode are respectively arranged in the plurality of grooves. And the gate structures are arranged in the grooves, so that the cellular structure size and the chip resistance are relatively small, and the conduction loss is reduced. The source electrode comprises source electrode metal, the source electrode metal filled in the groove and the corresponding epitaxial layer under the source electrode metal form a Schottky barrier, and the unipolar conduction characteristic of the Schottky barrier is utilized, so that the reverse recovery loss in the dynamic switching process of the semiconductor device can be reduced, and the bipolar degradation problem is avoided. 本申请实施例提供了一种半导体器件，该半导体器件在外延层内设置多个沟槽，并在多个沟槽内分别设置第一栅极、源极和第二栅极。在沟槽内设置栅极结构，使得元胞结构尺寸和芯片电阻较小，降低导通损耗。源极包括源极金属，填充于沟槽内的源极金属与对应正下方的外延层形成肖特基势垒