Substrate-reinforced source region edge P-type heavily-doped anti-radiation NMOS FinFET structure

The invention discloses an anti-radiation reinforcing structure for an NMOSFETs (N-channel Metal Oxide Semiconductor Field Effect Transistor), and relates to the field of semiconductor technologies and integrated circuits. The anti-radiation reinforcing structure is of a multi-layer structure, the lowest layer is a substrate or a well region, and the substrate or the well region comprises a low-doped bottom layer and high-doped ridge-shaped protrusions on the bottom layer; an N-type doped source semiconductor region, a channel semiconductor region and an N-type doped drain semiconductor region of which the upper surfaces are flush are sequentially arranged on the upper surfaces of the ridge-shaped bulges; and high-concentration P-type doped strip-shaped regions are arranged on the two sides of the source semiconductor region. On the basis of a traditional NMOSFETs, the P-type heavily-doped strip-shaped region and the highly-doped ridge-shaped protrusions in the substrate or the well region are added, the infl