Super junction insulated gate bipolar transistor and manufacturing method of terminal structure thereof

The invention discloses a super junction insulated gate bipolar transistor and a manufacturing method of a terminal structure of the super junction insulated gate bipolar transistor. The manufacturing method of the terminal structure comprises the steps that an epitaxial layer of a second conduction type is provided, the epitaxial layer is arranged on a drift region of the second conduction type, and the drift region comprises a super junction structure; and processing a first groove in a terminal area of the epitaxial layer, and filling a semiconductor of a first conductive type in the first groove, thereby forming a terminal structure. According to the manufacturing method provided by the invention, the external diffusion phenomenon of the P-type super junction region of the super junction structure in a high-temperature process can be effectively avoided, and the breakdown voltage and the avalanche tolerance of the device are improved. 本发明公开了一种超级结绝缘栅双极型晶体管及其终端结构的制作方法。所述终端结构的制作方法包括：提供第二导电类型的外延层，所述外延层设置在第二导电