Memory device, operating method thereof and memory system

The invention discloses a memory device, an operating method thereof and a memory system. In one aspect, a memory device includes a bit line connected to a plurality of memory cells of a memory array, the bit line having a first length. The memory device includes a first programmable bit line having a second length determined based on a size of the memory array, and a charge sharing circuit connected to the bit line and the first programmable bit line. The charge sharing circuit is used for transferring charge from the bit line to the first programmable bit line. The memory device comprises a discharge circuit connected to the first programmable bit line, and the discharge circuit is used for discharging stored charges in the first programmable bit line. 揭示一种记忆体装置及其操作方法以及记忆体系统。在一个态样中，记忆体装置包括连接至记忆体阵列的多个记忆体单元的位元线，位元线具有第一长度。记忆体装置包括具有基于记忆体阵列的大小决定的第二长度的第一可程序位元线，及连接至位元线及第一可程序位元线的电荷共享电路。电荷共享电路用以将电荷自位元线转移至第一可程序位元线。记忆体装置包括连接至第一可程序位元线的放电电路，放电电路用以对第一可程序位元线中的储存电荷放电。