SRAM (Static Random Access Memory) model extraction method

The invention relates to an SRAM (Static Random Access Memory) model extraction method, which comprises the following steps of: respectively extracting single-tube models based on single-tube measurement data of an SRAM unit at different measurement temperatures; based on the single tube model, performing SRAM unit performance simulation, and comparing read current, static noise margin, write noise margin, static leakage current and SRAM unit characteristic test data respectively; if the error of the read current does not meet the preset condition, adjusting the on-state current of the pull-down transistor and the transmission transistor; if the error of the static noise margin or the error of the write noise margin does not meet the preset condition, adjusting the threshold voltage of the pull-up transistor; if the error of the static leakage current does not meet the preset condition, adjusting off-state current of the pull-down transistor, the transmission transistor and the pull-up transistor; and complet