Semiconductor structure and forming method thereof
Semiconductor structures and methods of forming the same. The semiconductor structure includes: a first dielectric layer; a first conductive structure in the first dielectric layer; one or more second dielectric layers over the first dielectric layer and over the first conductive structure; a second...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Semiconductor structures and methods of forming the same. The semiconductor structure includes: a first dielectric layer; a first conductive structure in the first dielectric layer; one or more second dielectric layers over the first dielectric layer and over the first conductive structure; a second conductive structure in the second dielectric layer and on the first conductive structure; one or more metal liners between the second conductive structure and the second dielectric layer; the nitride barrier layer is located between the metal lining layers and the second dielectric layer, at least one metal lining layer in the metal lining layers is directly and electrically coupled with the top surface of the first conductive structure, and the second conductive structure is electrically coupled with the top surface of the first conductive structure through the at least one metal lining layer; or the second conductive structure is directly electrically coupled with the top surface of the first conductive structu |
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