Bismuth layered ceramic with excellent high-temperature insulativity and piezoelectricity and preparation method thereof
The invention provides bismuth layered ceramic with excellent high-temperature insulativity and piezoelectricity and a preparation method thereof, the molecular general formula of the bismuth layered ceramic is Li < x > Bi < 1-x/3 > (Mn < 1/4 > Sb < 1/2 > Zr < 1/4 >) &l...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides bismuth layered ceramic with excellent high-temperature insulativity and piezoelectricity and a preparation method thereof, the molecular general formula of the bismuth layered ceramic is Li < x > Bi < 1-x/3 > (Mn < 1/4 > Sb < 1/2 > Zr < 1/4 >) < y > Ti < 1-y > NbO9, the bismuth layered ceramic adopts Li < + > ions to replace part of Bi < 3 + > ions and adopts (Mn < 1/4 > Sb < 1/2 > Zr < 1/4 >) < 4 + > ion groups to replace part of Ti < 4 + > ions, and the value range of x in the molecular general formula is 0.02 > > = xgt; the value range of y is as follows: 0.15 > = ygt; 0, x and y are mole fractions. The preparation method adopts specific polarization temperature and polarization electric field, the polarization is sufficient, and the piezoelectric property is fully developed. A traditional solid-phase reaction method is adopted for preparation, the preparation process is simple and stable, and the method is suitable for popularization of large-scale industrial production. A method o |
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