Preparation method of perovskite thin film, photodiode and near-infrared photoelectric detector

The invention provides a preparation method of a perovskite thin film, a photodiode and a near-infrared photoelectric detector. The preparation method comprises the following steps: preparing a periodically parallel SU-8 template on an ITO (Indium Tin Oxide) substrate by utilizing a photoetching technology to obtain a template substrate; a precursor solution of tin-lead mixed perovskite is applied to the template substrate, and the tin-lead mixed perovskite polycrystalline thin film is prepared through the rapid printing technology. According to the scheme provided by the invention, the periodically parallel SU-8 template is introduced on the ITO substrate, so that the surface wettability of the ITO substrate can be improved, and the adhesive force between the precursor solution and the ITO substrate is improved, thereby realizing rapid printing and deposition of the high-quality tin-lead mixed perovskite polycrystalline film. 本发明提供了一种钙钛矿薄膜的制备方法、光电二极管及近红外光电探测器。该制备方法包括如下步骤：利用光刻技术在ITO基底上制备获得周期性并行的SU-8模板，得到模板基底；