Three-dimensional AND flash memory element

The invention provides a three-dimensional AND flash memory element. The three-dimensional AND flash memory element comprises a gate stack structure and a partition wall, the partition walls extend along a first direction and divide the gate stack structure into a plurality of sub-blocks. Each sub-block includes a plurality of columns. Each column comprises a plurality of channel columns, a plurality of charge storage structures and a plurality of pairs of conductor columns. And the plurality of pairs of conductor columns are arranged in the plurality of channel columns, penetrate through the grid stacking structure and are respectively connected with the plurality of channel columns. Each pair of conductor posts includes a first conductor post and a second conductor post spaced apart from each other along a second direction. An acute angle is formed between the second direction and the first direction. 本发明提供一种三维AND快闪存储器元件，包括：栅极堆叠结构与分隔墙。所述分隔墙沿着第一方向延伸，将所述栅极堆叠结构分成多个子区块。每一子区块包括：多个列。每一列包括：多个通道柱、多个电荷存储结构与多对导体柱。所述多