Diode packaging structure with double metallization layers and packaging method using diode packaging structure

According to the diode packaging structure containing the double metallization layers and the packaging method using the diode packaging structure, metal chromium is used as a bottom layer metal film of the diode metallization layers, mutual diffusion and reaction between nickel atoms in the metal nickel film and silicon crystals are blocked, and therefore the diode packaging structure containing the double metallization layers and the packaging method using the diode packaging structure containing the double metallization layers are improved. And an unstable compound nickel silicide is prevented from being formed between the metal nickel and the silicon crystal, so that the performance of a diode product is prevented from being reduced and the yield of the diode product is improved. 本发明提供了一种含有双金属化层的二极管封装结构及利用其的封装方法，其中，本发明二极管封装结构，使用金属铬作为二极管金属化层的底层金属薄膜，阻挡金属镍薄膜中的镍原子与硅晶之间的相互扩散和反应，并阻止金属镍与硅晶之间形成不稳定化合物硅化镍，从而防止二极管产品性能降低并提高二极管产品良率。