Probe card and probe card testing method

The invention discloses a probe card and a probe card test method, the probe card comprises a probe card main body, the probe card main body is provided with a plurality of pin structures, and each pin structure comprises a pin body, a first electrical structure and a second electrical structure. Wherein the first electrical structure is connected in series with the pin body; the second electrical structure is connected in parallel with the first electrical structure. Wherein the first electrical structure and the second electrical structure are connected in parallel and then are electrically connected with a liner of a sample to be tested. According to the invention, the problem that a metal connecting line between a gate oxide layer and a power supply is easy to burn out due to the increase of instantaneous current generated when a dielectric film or an oxide layer is punctured in the process of TDDB test and Vramp test in the prior art is solved. 本发明公开了一种探针卡和探针卡测试方法，所述探针卡包括探针卡主体，探针卡主体上设有若干引脚结构，引脚结构包括引脚本体、第