Imaging device

An imaging device includes: a photoelectric conversion unit that generates a signal charge by photoelectric conversion; a semiconductor substrate including a first semiconductor layer containing an impurity of a first conductivity type; a charge storage region that is an impurity region of the second conductivity type in the first semiconductor layer and stores signal charges; a transistor including a first impurity region of the second conductivity type in the first semiconductor layer as one of a source and a drain; and a blocking structure located between the charge storage region and the first impurity region. The cutoff structure includes a second impurity region of the first conductivity type in the first semiconductor layer, and a third impurity region of the first conductivity type in the first semiconductor layer having an impurity concentration different from that of the second impurity region. 摄像装置具备：光电转换部，通过光电转换而生成信号电荷；半导体基板，包括第1半导体层，该第1半导体层包含第1导电型的杂质；电荷积蓄区域，是第1半导体层内的第2导电型的杂质区域，且积蓄信号电荷；晶体管，包括第1半导体