Deposition of boron films
Methods of depositing a boron-containing film on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form a boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures may be sequential or simultaneous....
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | LIN YUNGN LANG JIYI HWANG HWA-YONG |
description | Methods of depositing a boron-containing film on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form a boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures may be sequential or simultaneous. A boron-containing film is selectively deposited on one material (e.g., SiN or Si), rather than another material (e.g., silicon oxide).
描述了在基板上沉积含硼膜的方法。将基板暴露于硼前驱物和等离子体,以形成含硼膜(如,元素硼、氧化硼、碳化硼、硅化硼、氮化硼)。暴露可为顺序的或同时的。含硼膜选择性地沉积在一种材料(如,SiN或Si)上,而不是另一种材料(如,氧化硅)上。 |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116438330A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116438330A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116438330A3</originalsourceid><addsrcrecordid>eNrjZJB0SS3IL84syczPU8hPU0jKLwIy0jJzcot5GFjTEnOKU3mhNDeDoptriLOHLlBDfGpxQWJyal5qSbyzn6GhmYmxhbGxgaMxMWoAF4MiiA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Deposition of boron films</title><source>esp@cenet</source><creator>LIN YUNGN ; LANG JIYI ; HWANG HWA-YONG</creator><creatorcontrib>LIN YUNGN ; LANG JIYI ; HWANG HWA-YONG</creatorcontrib><description>Methods of depositing a boron-containing film on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form a boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures may be sequential or simultaneous. A boron-containing film is selectively deposited on one material (e.g., SiN or Si), rather than another material (e.g., silicon oxide).
描述了在基板上沉积含硼膜的方法。将基板暴露于硼前驱物和等离子体,以形成含硼膜(如,元素硼、氧化硼、碳化硼、硅化硼、氮化硼)。暴露可为顺序的或同时的。含硼膜选择性地沉积在一种材料(如,SiN或Si)上,而不是另一种材料(如,氧化硅)上。</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230714&DB=EPODOC&CC=CN&NR=116438330A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230714&DB=EPODOC&CC=CN&NR=116438330A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN YUNGN</creatorcontrib><creatorcontrib>LANG JIYI</creatorcontrib><creatorcontrib>HWANG HWA-YONG</creatorcontrib><title>Deposition of boron films</title><description>Methods of depositing a boron-containing film on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form a boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures may be sequential or simultaneous. A boron-containing film is selectively deposited on one material (e.g., SiN or Si), rather than another material (e.g., silicon oxide).
描述了在基板上沉积含硼膜的方法。将基板暴露于硼前驱物和等离子体,以形成含硼膜(如,元素硼、氧化硼、碳化硼、硅化硼、氮化硼)。暴露可为顺序的或同时的。含硼膜选择性地沉积在一种材料(如,SiN或Si)上,而不是另一种材料(如,氧化硅)上。</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB0SS3IL84syczPU8hPU0jKLwIy0jJzcot5GFjTEnOKU3mhNDeDoptriLOHLlBDfGpxQWJyal5qSbyzn6GhmYmxhbGxgaMxMWoAF4MiiA</recordid><startdate>20230714</startdate><enddate>20230714</enddate><creator>LIN YUNGN</creator><creator>LANG JIYI</creator><creator>HWANG HWA-YONG</creator><scope>EVB</scope></search><sort><creationdate>20230714</creationdate><title>Deposition of boron films</title><author>LIN YUNGN ; LANG JIYI ; HWANG HWA-YONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116438330A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN YUNGN</creatorcontrib><creatorcontrib>LANG JIYI</creatorcontrib><creatorcontrib>HWANG HWA-YONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN YUNGN</au><au>LANG JIYI</au><au>HWANG HWA-YONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Deposition of boron films</title><date>2023-07-14</date><risdate>2023</risdate><abstract>Methods of depositing a boron-containing film on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form a boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures may be sequential or simultaneous. A boron-containing film is selectively deposited on one material (e.g., SiN or Si), rather than another material (e.g., silicon oxide).
描述了在基板上沉积含硼膜的方法。将基板暴露于硼前驱物和等离子体,以形成含硼膜(如,元素硼、氧化硼、碳化硼、硅化硼、氮化硼)。暴露可为顺序的或同时的。含硼膜选择性地沉积在一种材料(如,SiN或Si)上,而不是另一种材料(如,氧化硅)上。</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_CN116438330A |
source | esp@cenet |
subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Deposition of boron films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T19%3A45%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIN%20YUNGN&rft.date=2023-07-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116438330A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |