Deposition of boron films

Methods of depositing a boron-containing film on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form a boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures may be sequential or simultaneous. A boron-containing film is selectively deposited on one material (e.g., SiN or Si), rather than another material (e.g., silicon oxide). 描述了在基板上沉积含硼膜的方法。将基板暴露于硼前驱物和等离子体，以形成含硼膜(如，元素硼、氧化硼、碳化硼、硅化硼、氮化硼)。暴露可为顺序的或同时的。含硼膜选择性地沉积在一种材料(如，SiN或Si)上，而不是另一种材料(如，氧化硅)上。