Novel SGT super junction MOSFET structure

The present invention is a trench metal-oxide-semiconductor field effect transistor (MOSFET) device comprising a combination of a shielded trench gate structure and a super junction structure within an epitaxial layer containing alternating n-doped and p-doped pillars in a drift region. In one example, a gate trench is formed in and over an n-doped pillar, the n-doped pillar having an excess charge region near and around the bottom of the respective gate trench. The excess charge is balanced due to the shield electrode in the gate trench. 本发明是一种沟槽金属-氧化物-半导体场效应晶体管(MOSFET)器件，包括屏蔽沟槽栅极结构和超级结结构的组合，在含有漂流区中交替的n-掺杂和p-掺杂立柱的外延层内。在一个示例中，栅极沟槽形成在n-掺杂立柱中和n-掺杂立柱上方，n-掺杂立柱在相应的栅极沟槽底部附近和周围具有一个多余的电荷区域。由于栅极沟槽中的屏蔽电极，多余的电荷是平衡的。