Semiconductor wafer scribing channel manufacturing process

The invention discloses a semiconductor wafer scribing channel manufacturing process, which comprises the following steps of: depositing a silicon oxide layer on the back surface of a semiconductor wafer, coating a photoresist layer on the surface of the deposited silicon oxide layer, completing scribing channel groove etching on a wafer body by adopting dry etching, removing the coated photoresist layer by adopting wet etching, and removing the deposited silicon oxide layer by adopting wet etching. By depositing the silicon oxide layer on the surface of the metal coating, the electroplating metal layer on the side wall and the bottom of the blind hole can be protected, and meanwhile, the thickness of the photoresist layer to be coated on the blind hole and the nearby position can be reduced, so that the influence of the photoresist layer on exposure and development is weakened, and the exposure and development performance is improved by the thinner photoresist layer; therefore, the position of the scribing c