Bottom treatment
Embodiments disclosed herein generally relate to methods and apparatus for treating a bottom surface of a substrate to counteract thermal stress on the substrate. A corrective strain may be applied to the bottom surface of the substrate, which may compensate for undesired strain and deformation on t...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Embodiments disclosed herein generally relate to methods and apparatus for treating a bottom surface of a substrate to counteract thermal stress on the substrate. A corrective strain may be applied to the bottom surface of the substrate, which may compensate for undesired strain and deformation on the top surface of the substrate. A specially designed film may be formed on the backside of a substrate by any combination of deposition, implantation, thermal treatment, and etching to create a strain that compensates for undesirable deformation of the substrate. Local strain can be caused by locally changing the hydrogen content of the silicon nitride film or the carbon film. The structures may be formed by printing, lithography, or self-assembly techniques. The treatment of several layers of the film may be determined from a desired stress map, and the treatment may include annealing, injection, melting, or other heat treatment.
本文所公开的实施方式一般地涉及用于处理基板的底表面以抵消基板上的热应力的方法及装置。可将校正应变施加至基板的底表面,校正应变可补偿基板的顶表面上的非期望的应变及变形。可 |
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