Novel memristor cross array unit equivalent circuit

The invention discloses a novel memristor cross array unit equivalent circuit. In order to make up for the lack of a complete memristor cross array equivalent circuit in the present invention, the equivalent circuit comprises two bit lines, two word lines and memristors, and the memristors are used for connecting two signal lines which are perpendicular to each other; the equivalent circuit considers parasitic effects generated between adjacent signal lines and upper and lower vertical signal lines, and the parasitic effects comprise line resistance, coupling capacitance and coupling inductance. Based on the circuit, a PCB sample experiment test is carried out. The experimental test output voltage is almost the same as the simulation result of the ADS circuit. The structure is direct and clear, and comprises a complete parasitic effect. And a unit structure can be suitable for a cross array of any dimension. 本发明公开了一种新型忆阻器交叉阵列单元等效电路。为了弥补现有发明中缺乏完整的忆阻器交叉阵列等效电路，本发明的等效电路包括两条位线、两条字线以及忆阻器，所述忆阻器用于连接相互垂直的两条信号线；所述等效电路考