Semiconductor structure

A semiconductor structure includes a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer. The first nitride layer is located on the substrate. The polarity inversion layer is located on the surface of the first nitride layer so as to convert the non-metal polarity surface of the first nitride layer into the metal polarity surface of the polarity inversion layer. The second nitride layer is located on the polarity reversal layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer contain an iron element. The semiconductor structure provided by the invention has the effect of inhibiting generation of a parasitic channel. 一种半导体结构，包括基板、第一氮化物层、极性反转层、第二氮化物层以及第三氮化物层。第一氮化物层位于基板上。极性反转层位于第一氮化物层的表面，以将第一氮化物层的非金属极性表面转换为极性反转层的金属极性表面。第二氮化物层位于极性反转层上。第三氮化物层位于第二氮化物层上。基板、第一氮化物层、极性反转层以及第二氮化物层包含铁元素。本发明的半导体结构抑制具有寄生通道产生的功效。