Method for reducing plasma etching damage of metal film layer

The invention relates to the field of semiconductor manufacturing, and discloses a method for reducing plasma etching damage of a metal film layer. The method comprises the following steps: forming a silicon dioxide film containing a first photoetching pattern on the surface of silicon carbide, and sequentially sputtering a metal titanium layer, a titanium nitride layer and a metal aluminum layer on the surface of the silicon carbide to form a metal film layer; coating a first layer of photoresist on the metal film layer, and forming a second photoetching pattern after exposure and development; etching the metal layer for the first time by using the plasma etching machine according to the second photoetching pattern to obtain a first etching pattern; bombarding the silicon carbide material etched for the first time by adopting plasma of inert gas; and etching the bombarded silicon carbide material for the second time by using the plasma etching machine according to the first photoetching pattern and the secon