Silicon carbon material production device

The invention belongs to the field of silicon-carbon material production, and particularly relates to a silicon-carbon material production device which comprises a single crystal furnace. An upper furnace chamber is mounted on the top surface of the single crystal furnace; a discharge hole is formed in the side surface of the upper furnace chamber; the upper furnace chamber is connected with an arc-shaped cover plate in a sliding manner at the discharge hole; a lifting device is mounted at the top of the upper furnace chamber; the top of the lifting device is in sliding connection with a plate; a silicon carbide rod is lifted to the upper furnace chamber through the lifting device by using a lifting crystal drawing method, after the silicon carbide rod is cooled, the lifting device drives the upper furnace chamber to slide along the connecting plate, then the lifting device and the upper furnace chamber are put down together through the lifters, and at the moment, a worker can slide the arc-shaped cover plate