Method for manufacturing deep silicon etching by laser-assisted etching of insulating layer medium and application

The invention belongs to the technical field of semiconductor manufacturing, and discloses a method for manufacturing deep silicon etching through laser-assisted etching of an insulating layer medium and application, HF acid, acetone and absolute ethyl alcohol are used for cleaning a Si wafer in sequence, and a naturally oxidized oxide layer and other inorganic matter on the surface are removed; the method comprises the following steps of: depositing a layer of insulating layer medium as a hard mask on a Si substrate to be etched through a chemical vapor deposition process; carrying out high-temperature oxidation treatment on the surface of the Si wafer on which the insulating layer medium is deposited; etching a pattern on the surface of the Si wafer by using a laser etching process; and carrying out a standard BOSCH dry etching process on the Si wafer after the pattern is etched until the Si wafer is etched through. According to the method, an insulating layer medium with a high etching selection ratio with