SEMICONDUCTOR PROCESSING APPARATUS HAVING HEATER

The present disclosure relates to embodiments of semiconductor deposition reactor manifolds that can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold includes a heater block on which heater elements are mount...

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Bibliographische Detailangaben
Hauptverfasser:	WINKLER JERRY L, KEDIA SOHRAB, NANDWANA DINESH, DUNN TODD ROBERT, VAN DER RURIO KOEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present disclosure relates to embodiments of semiconductor deposition reactor manifolds that can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold includes a heater block on which heater elements are mounted. Advantageously, the heater block is detachably mounted for ease of replacement. 本公开涉及半导体沉积反应器歧管的实施例，该半导体沉积反应器歧管可用于使用诸如原子层沉积(ALD)的过程来沉积半导体层。该半导体沉积反应器歧管包括加热器块，加热器元件安装在歧管体上。有利地，加热器块可拆卸地安装，以便于更换。