Power electronic system, manufacturing method thereof and method for protecting half-bridge circuit

A power electronic system includes a power semiconductor module having a first side, an opposite second side, and a lateral side connecting the first side and the second side, the invention relates to a power semiconductor module comprising at least one power semiconductor die forming at least a part of a half-bridge circuit, a first encapsulation encapsulating the at least one power semiconductor die, and at least one external contact configured as a direct current contact of the half-bridge circuit, the external contact is exposed from the first encapsulation body at a lateral side of the power semiconductor module; a driver module arranged over a first side of the power semiconductor module and configured to be capable of controlling the half-bridge circuit; and a differential Hall sensor disposed over the external contact and configured to detect a direct current flowing through the external contact, in which the driver module is configured to modify a control mode of the half-bridge circuit based on a di