Spin-orbit torque magnetic random access memory and operation method thereof

The invention discloses a spin-orbital moment magnetic random access memory, which comprises a plurality of memory units, and each memory unit comprises an orbital Hall layer suitable for generating orbital polarization flow under the action of in-plane current; the magnetic tunnel junction sequentially comprises, from bottom to top, a magnetic free layer suitable for generating a spin polarization flow along a first spin direction and a spin polarization flow along a second spin direction opposite to the first spin direction under the action of an in-plane current and an orbital polarization flow diffused to the magnetic free layer; the magnetic free layer has perpendicular anisotropy; a tunneling insulating layer; a magnetic pinning layer; an antiferromagnetic layer or an artificial antiferromagnetic layer; wherein the spin polarization flow in the first spin direction and the spin polarization flow in the second spin direction, which has a spin direction opposite to the first spin direction, generate a com