Semiconductor structure and manufacturing method thereof

The invention discloses a semiconductor structure and a method of manufacturing the same, where the semiconductor structure includes a substrate including a first device region and a second device region adjacent to the first device region; the trench isolation structure is arranged in the substrate between the first element region and the second element region, the trench isolation structure comprises a first bottom surface in the first element region and a second bottom surface in the second element region, and the first bottom surface is flush with the second bottom surface. 本发明公开一种半导体结构及其制造方法，其中该半导体结构包含基底，包含第一元件区和邻近第一元件区的第二元件区；以及沟槽隔离结构，设于第一元件区与第二元件区之间的基底中，其中沟槽隔离结构包含在第一元件区内的第一底面和在第二元件区内的第二底面，其中，第一底面与第二底面齐平。