Bit lines with high conductivity and low mutual capacitance and related devices, computing systems, and methods

Bit lines with high conductivity and low mutual capacitance and related devices, computing systems, and methods are disclosed. An apparatus includes an electrically insulating material and a bit line including copper in the electrically insulating material. The electrically insulating material defines an air gap between the bit lines. A method of manufacturing a memory device includes forming a trench in an electrically insulating material on or in circuitry of the memory device; forming a first conductive material in the trench; removing a portion of the electrically insulating material to form an air gap between the trenches; recessing the first conductive material; and replacing the removed first conductive material with a second conductive material. The second conductive material is more conductive than the first conductive material. A memory device includes the apparatus. A computing system includes the memory device. 本发明公开具有高导电率及低互电容的位线及相关设备、计算系统及方法。一种设备包含电绝缘材料及所述电绝缘材料中包含铜的位线。所述电绝缘材料界定所述位线之间的气隙。一种制造存储器装