Method for forming thin semiconductor-on-insulator (SOI) substrate
The embodiment of the invention relates to a method for forming a thin semiconductor-on-insulator (SOI) substrate. Various embodiments of the present application relate to a method of forming a thin semiconductor-on-insulator (SOI) substrate at low cost and at low total thickness variation (TTV). In...
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Format: | Patent |
Sprache: | chi ; eng |
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