Method for forming thin semiconductor-on-insulator (SOI) substrate

The embodiment of the invention relates to a method for forming a thin semiconductor-on-insulator (SOI) substrate. Various embodiments of the present application relate to a method of forming a thin semiconductor-on-insulator (SOI) substrate at low cost and at low total thickness variation (TTV). In...

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Bibliographische Detailangaben
Hauptverfasser: XU HONGWEN, LU JIEFU, CHAE MIN-YOUNG, ZHENG YOUHONG, LIN YONGLONG, ZHOU SHIPEI
Format: Patent
Sprache:chi ; eng
Schlagworte:
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