Method for forming thin semiconductor-on-insulator (SOI) substrate

The embodiment of the invention relates to a method for forming a thin semiconductor-on-insulator (SOI) substrate. Various embodiments of the present application relate to a method of forming a thin semiconductor-on-insulator (SOI) substrate at low cost and at low total thickness variation (TTV). In some embodiments, an etch stop layer is epitaxially formed on a sacrificial substrate. A device layer is epitaxially formed on the etch stop layer and has a different crystal lattice than the etch stop layer. The sacrificial substrate is bonded to a handling substrate such that the device layer and the etch stop layer are between the sacrificial substrate and the handling substrate. And removing the sacrificial substrate. An etch is performed into the etch stop layer to remove the etch stop layer. The etching is performed using an etchant including hydrofluoric acid, hydrogen peroxide, and acetic acid. 本申请实施例涉及用于形成薄的绝缘体上半导体SOI衬底的方法。本申请案的各种实施例涉及一种以低成本且以低总厚度变动TTV形成薄的绝缘体上半导体SOI衬底的方法。在一些实施例中，在牺牲衬底上外延形成蚀刻停止层。装置层外延形成于所述