Plasma control device and plasma processing system

There is provided a plasma control apparatus including: a plasma electrode disposed in a plasma chamber and to which radio frequency (RF) power having a fundamental frequency is applied to generate plasma; an edge electrode disposed adjacent to the plasma electrode and corresponding to the plasma edge boundary region; and a plasma control circuit electrically connected to the edge electrode, the plasma control circuit is configured to control electrical boundary conditions in a plasma edge boundary region of a fundamental frequency component, a harmonic component generated by nonlinearity of the plasma, and an intermodulation distortion frequency component generated by each of the fundamental frequency component and the harmonic component and a frequency component in the plasma chamber, the plasma control circuit is configured to vary an electrical boundary condition to control a standing wave in the plasma chamber. 提供了一种等离子体控制装置，包括：等离子体电极，设置在等离子体腔室中，并且具有基频的射频(RF)功率被施加到该等离子体电极以生成等离子体；边缘电极，与等离子体电极相邻设置，并且对应于等离子