APPARATUS FOR PROCESSING SUBSTRATE

Exemplary embodiments of the present invention provide an apparatus for processing a substrate. The apparatus for processing a substrate includes: a process chamber having a processing space therein; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying a processing gas to the processing space; and a microwave application unit for applying microwaves to the processing gas to generate plasma, in which the microwave application unit includes a transmission plate disposed above the support unit to radiate microwaves to the processing space; the first waveguide is arranged above the transmission plate; and a first power supply for applying microwaves to the first waveguide, where the first waveguide is disposed in a ring shape. 本发明的示例性实施方案提供了一种用于处理基板的装置。该用于处理基板的装置包括：工艺腔室，在该工艺腔室中具有处理空间；支承单元，该支承单元用于在该处理空间中支承该基板；气体供应单元，该气体供应单元用于将处理气体供应到该处理空间；以及微波施用单元，该微波施用单元用于将微波施用到该处理气体以产生等离子体，其中，该微波施用单元包括传输板，该传输板设置在该支承单元的上方以将微波辐射到该处理空间；第一波导，该第一波导设置在该传输板的上方；以及第一功率供应器，该第一功率供应器用于将微波施用到该第