NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF NONVOLATILE MEMORY

The invention provides a non-volatile memory device and a programming method of the non-volatile memory device. A non-volatile memory device includes at least one memory block and a control circuit. The at least one memory block includes a plurality of cell strings divided into a plurality of stacks disposed in a vertical direction, and each of the plurality of stacks includes at least one dummy word line. The control circuit controls the program operation by applying a program voltage to selected word lines of the plurality of cell strings during a program execution period, and by reducing a voltage level of a dummy voltage applied to at least one dummy word line of the stack on at least one of the plurality of stacks during the program execution period. The at least one upper stack is disposed at a higher position than a selected stack in the vertical direction, and the selected stack from among the plurality of stacks includes a selected word line. 提供一种非易失性存储器装置和非易失性存储器装置的编程方法。非易失性存储器装置包括至少一个存储器块和控制电路。至少一个