Method for improving Te-based thermoelectric arm performance and thermal stability by using topological close-packed phase

The invention belongs to the technical field of thermoelectric device preparation and connecting pieces, and aims to solve the problem that in the process of connecting a Te0. 985Sb0. 015 thermoelectric material and a Ni electrode at present, a large number of aggregated holes and segregation of a doped element Sb are generated at an interface, and the electrical transport performance and thermal stability at the interface are seriously weakened. The invention provides a method for improving the performance and the thermal stability of a Te-based thermoelectric arm by using a topological close-packed phase, the topological close-packed phase NiTe2-x is synthesized by a solid-phase reaction method, x is greater than or equal to 0 and less than or equal to 0.9, and the topological close-packed phase NiTe2-x is introduced between Ni and Te0. 985Sb0.015 to form a Ni/NiTe2-x/Te0. 985Sb0.015/NiTe2-x/Ni gradient connection structure. A large number of aggregated holes and segregation of a doped element Sb generated