Epitaxial growth method

The invention provides an epitaxial growth method. The method comprises the following steps: loading a silicon wafer onto a base; the working parameters of the upper heating assembly and the lower heating assembly are adjusted to adjust the temperature field of the reaction chamber, so that the reaction chamber reaches the preset process temperature, and the temperature difference between the silicon wafer and the base is within a preset threshold value; and supplying silicon source gas to the reaction chamber so as to grow and form an epitaxial layer on the surface of the silicon wafer. According to the epitaxial growth method provided by the invention, the pollution mark of the supporting pin rod during epitaxial growth of the silicon wafer can be inhibited, the process is simple, and the repeatability is high. 本公开提供一种外延生长方法，所述方法包括如下步骤：将硅片加载至基座上；调节上加热组件和下加热组件的工作参数，以调节反应腔室的温场，使反应腔室达到预定工艺温度，且硅片与所述基座的温差在预定阈值内；向反应腔室供给硅源气体，以在硅片表面成长形成外延层。本公开提供的外延生长方法可抑制硅片外延生长时支撑销杆污染印记的产生，工艺简单、重复性高。