RF transistor amplifier package

The RF transistor amplifier includes: an RF transistor amplifier die having a semiconductor layer structure; an interconnect structure having opposing first and second sides, where the first side of the interconnect structure is adjacent to a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement; and one or more circuit elements at the first side and/or the second side of the interconnect structure. RF晶体管放大器包括：具有半导体层结构的RF晶体管放大器管芯；具有相对的第一侧和第二侧的互连结构，其中，互连结构的第一侧与RF晶体管放大器管芯的表面相邻，使得互连结构和RF晶体管放大器管芯处于堆叠布置中；以及在互连结构的第一侧和/或第二侧的一个或多个电路元件。