Plane structure superlattice infrared detector

The invention provides a planar structure superlattice infrared detector. The planar structure superlattice infrared detector structurally comprises a substrate material layer, a buffer layer, a lower electrode layer, a superlattice absorption layer, a barrier layer, an upper electrode layer, an ion implantation isolation layer, a passivation layer and a metal contact layer in sequence from bottom to top. According to the superlattice infrared detector, a planar structure is adopted, ion bombardment is performed on the upper electrode layer through ion implantation to form a compensation doped high-resistance area, isolation of independent pixels is completed, then the planar junction superlattice infrared detector is achieved, side wall leakage current caused by mesa etching operation can be eliminated, and the performance of the superlattice infrared detector is improved. The surface dielectric film passivation process difficulty is reduced, the preparation process is simplified, and the high-resistance reg