Semiconductor structure based on three-dimensional integration of various thin film transistors

The invention relates to a semiconductor structure based on three-dimensional integration of various thin film transistors. The three-dimensional integrated semiconductor structure based on multiple thin film transistors comprises a substrate; the N thin film transistor layers are sequentially stacked in the first direction, each thin film transistor layer comprises a plurality of thin film transistors, and the types of the thin film transistors in at least two thin film transistor layers are different; at least one of the N thin film transistor layers is used for forming a sensing circuit, at least one of the N thin film transistor layers is used for forming a storage circuit, and at least one of the N thin film transistor layers is used for forming a calculation and signal processing circuit. And the types of the circuits formed by at least two thin film transistor layers are different. The integration level of the semiconductor structure is improved. 本发明涉及一种基于多种薄膜晶体管三维集成的半导体结构。所述基于多种薄膜晶体管三维集成的半导体结构包括：衬底；N层