Method for improving single event burnout resistance of MOSFET

The invention discloses a method for improving single event burnout resistance of a metal oxide semiconductor field effect transistor (MOSFET), and belongs to the field of semiconductor power devices. The bottom oxidation layer at the bottom of the trench is thickened by utilizing bottom local oxida...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XU HAIMING, TANG XINYU, ZHANG QINGDONG, LIAO YUANBAO, XU ZHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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