Method for improving single event burnout resistance of MOSFET

The invention discloses a method for improving single event burnout resistance of a metal oxide semiconductor field effect transistor (MOSFET), and belongs to the field of semiconductor power devices. The bottom oxidation layer at the bottom of the trench is thickened by utilizing bottom local oxidation, so that the single-particle gate-through resistance is improved; the trap injection process is carried out before the gate oxide process, and a trench side wall sacrifice oxidation process is utilized to achieve the purpose of junction pushing; a low-temperature wet oxygen process is adopted in the gate oxide process, so that the anti-total dose characteristic of the trench-type MOSFET is ensured; the hard masking layer etched by the groove is reserved before the polycrystal process, so that a certain height difference is formed between the polycrystal surface and the silicon surface; and removing silicon dioxide and silicon nitride layers of the hard masking layer of the groove in the cellular region through