Method for stably testing electrical parameters of thick gate oxide device

The invention discloses a method for stably testing electrical parameters of a thick gate oxide device, and relates to the field of semiconductor device testing. The method comprises the following steps: connecting a polycrystalline silicon gate of a thick gate oxide device to be measured with a polycrystalline silicon gate of a thin gate oxide device through a poly fuse structure; waiting for a discharge process of a preset duration; fusing a thermal fuse in the poly fuse structure; performing a WAT test on the thick gate oxide device; by adopting the technical scheme, the effect of improving the stability of the electrical parameters of the thick gate oxide device in the testing process is achieved. 本申请公开了一种稳定测试厚栅氧器件电学参数的方法，涉及半导体器件测试领域。该方法包括：通过poly fuse结构将待测的厚栅氧器件的多晶硅栅极与薄栅氧器件的多晶硅栅极相连；等待预设持续时长的放电过程；熔断所述poly fuse结构中的热熔丝；对所述厚栅氧器件进行WAT测试；通过采用上述技术方案，实现了提高厚栅氧器件在测试过程中电学参数的稳定性的效果。