Semiconductor device and manufacturing method thereof

A semiconductor device includes a vertical semiconductor element having a deep layer, a current diffusion layer, a base region, a high concentration region, and a trench gate structure. The deep layer has a plurality of segments separated from each other in one direction. The current diffusion layer is located between two adjacent sections of the deep layer. The high concentration region is located on a portion of the base region. The trench gate structure includes a gate trench, a gate insulating film, and a gate electrode. The current diffusion layer is located at the bottom of the trench gate structure and is provided with an ion implantation layer extending from the bottom of the gate trench to the bottom of the deep layer or at a position below the bottom of the deep layer. 一种半导体器件包括具有深层、电流扩散层、基区、高浓度区和沟槽栅极结构的垂直半导体元件。所述深层具有在一个方向上彼此分开的多个区段。所述电流扩散层位于所述深层的相邻两个区段之间。所述高浓度区位于所述基区的一部分上。所述沟槽栅极结构包括栅极沟槽、栅极绝缘膜和栅极电极。所述电流扩散层位于所述沟槽栅极结构的底部，并且具有从栅极沟槽底部延伸到深层底部或深层底部下方位置的离子注入层。