Power semiconductor device
The invention provides a power semiconductor device. The power semiconductor device comprises a terminal seat. The terminal seat is provided with a first end and a second end which are opposite to each other, the first end is provided with a first flange expanding outwards, the first flange is welde...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WU SHENGCAI GAO GUOSHU YU TAIJUN WU HANLIN LI TAIGUANG ZHANG JINGYAO |
| description | The invention provides a power semiconductor device. The power semiconductor device comprises a terminal seat. The terminal seat is provided with a first end and a second end which are opposite to each other, the first end is provided with a first flange expanding outwards, the first flange is welded on a connecting pad of a substrate through welding flux, and an included angle between an extending direction of the first flange and a length direction of the terminal seat is larger than 90 degrees.
本发明提供一种功率半导体装置，包括一端子座。端子座具有相对的一第一端与一第二端，其中第一端具有向外扩展的一第一凸缘，第一凸缘通过焊料焊接于一基板的一接垫，第一凸缘的一延伸方向与端子座的一长度方向的夹角大于90度。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116266566A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116266566A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116266566A3</originalsourceid><addsrcrecordid>eNrjZJAKyC9PLVIoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGZkZmZqZmZo7GxKgBAGMSI0s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Power semiconductor device</title><source>esp@cenet</source><creator>WU SHENGCAI ; GAO GUOSHU ; YU TAIJUN ; WU HANLIN ; LI TAIGUANG ; ZHANG JINGYAO</creator><creatorcontrib>WU SHENGCAI ; GAO GUOSHU ; YU TAIJUN ; WU HANLIN ; LI TAIGUANG ; ZHANG JINGYAO</creatorcontrib><description>The invention provides a power semiconductor device. The power semiconductor device comprises a terminal seat. The terminal seat is provided with a first end and a second end which are opposite to each other, the first end is provided with a first flange expanding outwards, the first flange is welded on a connecting pad of a substrate through welding flux, and an included angle between an extending direction of the first flange and a length direction of the terminal seat is larger than 90 degrees.
本发明提供一种功率半导体装置，包括一端子座。端子座具有相对的一第一端与一第二端，其中第一端具有向外扩展的一第一凸缘，第一凸缘通过焊料焊接于一基板的一接垫，第一凸缘的一延伸方向与端子座的一长度方向的夹角大于90度。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230620&DB=EPODOC&CC=CN&NR=116266566A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230620&DB=EPODOC&CC=CN&NR=116266566A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU SHENGCAI</creatorcontrib><creatorcontrib>GAO GUOSHU</creatorcontrib><creatorcontrib>YU TAIJUN</creatorcontrib><creatorcontrib>WU HANLIN</creatorcontrib><creatorcontrib>LI TAIGUANG</creatorcontrib><creatorcontrib>ZHANG JINGYAO</creatorcontrib><title>Power semiconductor device</title><description>The invention provides a power semiconductor device. The power semiconductor device comprises a terminal seat. The terminal seat is provided with a first end and a second end which are opposite to each other, the first end is provided with a first flange expanding outwards, the first flange is welded on a connecting pad of a substrate through welding flux, and an included angle between an extending direction of the first flange and a length direction of the terminal seat is larger than 90 degrees.
本发明提供一种功率半导体装置，包括一端子座。端子座具有相对的一第一端与一第二端，其中第一端具有向外扩展的一第一凸缘，第一凸缘通过焊料焊接于一基板的一接垫，第一凸缘的一延伸方向与端子座的一长度方向的夹角大于90度。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKyC9PLVIoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGZkZmZqZmZo7GxKgBAGMSI0s</recordid><startdate>20230620</startdate><enddate>20230620</enddate><creator>WU SHENGCAI</creator><creator>GAO GUOSHU</creator><creator>YU TAIJUN</creator><creator>WU HANLIN</creator><creator>LI TAIGUANG</creator><creator>ZHANG JINGYAO</creator><scope>EVB</scope></search><sort><creationdate>20230620</creationdate><title>Power semiconductor device</title><author>WU SHENGCAI ; GAO GUOSHU ; YU TAIJUN ; WU HANLIN ; LI TAIGUANG ; ZHANG JINGYAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116266566A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WU SHENGCAI</creatorcontrib><creatorcontrib>GAO GUOSHU</creatorcontrib><creatorcontrib>YU TAIJUN</creatorcontrib><creatorcontrib>WU HANLIN</creatorcontrib><creatorcontrib>LI TAIGUANG</creatorcontrib><creatorcontrib>ZHANG JINGYAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WU SHENGCAI</au><au>GAO GUOSHU</au><au>YU TAIJUN</au><au>WU HANLIN</au><au>LI TAIGUANG</au><au>ZHANG JINGYAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power semiconductor device</title><date>2023-06-20</date><risdate>2023</risdate><abstract>The invention provides a power semiconductor device. The power semiconductor device comprises a terminal seat. The terminal seat is provided with a first end and a second end which are opposite to each other, the first end is provided with a first flange expanding outwards, the first flange is welded on a connecting pad of a substrate through welding flux, and an included angle between an extending direction of the first flange and a length direction of the terminal seat is larger than 90 degrees.
本发明提供一种功率半导体装置，包括一端子座。端子座具有相对的一第一端与一第二端，其中第一端具有向外扩展的一第一凸缘，第一凸缘通过焊料焊接于一基板的一接垫，第一凸缘的一延伸方向与端子座的一长度方向的夹角大于90度。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN116266566A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Power semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T07%3A25%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WU%20SHENGCAI&rft.date=2023-06-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116266566A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |