Power semiconductor device

The invention provides a power semiconductor device. The power semiconductor device comprises a terminal seat. The terminal seat is provided with a first end and a second end which are opposite to each other, the first end is provided with a first flange expanding outwards, the first flange is welded on a connecting pad of a substrate through welding flux, and an included angle between an extending direction of the first flange and a length direction of the terminal seat is larger than 90 degrees. 本发明提供一种功率半导体装置，包括一端子座。端子座具有相对的一第一端与一第二端，其中第一端具有向外扩展的一第一凸缘，第一凸缘通过焊料焊接于一基板的一接垫，第一凸缘的一延伸方向与端子座的一长度方向的夹角大于90度。