Manufacturing method of interconnection structure

The invention discloses a manufacturing method of an interconnection structure. The manufacturing method comprises the following steps. A substrate is provided. A plurality of sacrificial layers are formed on a substrate. A dielectric layer is formed between two adjacent sacrificial layers. There is an air gap in the dielectric layer. Removing the plurality of sacrificial layers to form a plurality of first openings; a conductive layer is formed in the first opening. 本发明公开一种内连线结构的制造方法，包括以下步骤。提供基底。在基底上形成多个牺牲层。在相邻两个牺牲层之间形成介电层。在介电层中具有气隙。移除多个牺牲层，而形成多个第一开口。在第一开口中形成导电层。