Reinforcing structure and reinforcing method for wafer-level RDL stress sensitive area

The invention provides a reinforcing structure and a reinforcing method for a wafer-level RDL stress sensitive area, and belongs to the technical field of semiconductor processing. According to the invention, the metal reinforcing layer is electroplated at the corner of the RDL before or after the RDL wiring, so that the metal reinforcing layer located at the upper part or the lower part of the RDL wiring layer is additionally arranged at the corner of the RDL wiring layer. Through a local reinforcing method, the stress hardness of a sensitive area at the RDL corner is effectively relieved, the maximum stress value at the RDL corner is reduced, and the reliable service life is prolonged. 本发明提供了一种晶圆级RDL应力敏感区域的加固结构与加固方法，属于半导体加工技术领域。本发明通过在RDL布线之前或之后，在RDL拐角处电镀金属加固层，从而在RDL布线层的拐角处增设一层位于RDL布线层的上部或下部的金属加固层。通过局部加固的方法，有效缓解RDL拐角处这一敏感区域应力的硬度，降低RDL拐角处的最大应力值，提升可靠寿命。