Negative electrode structure for improving Smile effect of semiconductor laser

The invention discloses a negative electrode structure for improving the Smile effect of a semiconductor laser. The negative electrode structure comprises a chip welding area, an insulating area and a tooth-shaped structure for connecting the chip welding area and the insulating area. The negative e...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU XUYAN, CHENG SHICONG, ZHENG WANHUA, SI TINGYU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a negative electrode structure for improving the Smile effect of a semiconductor laser. The negative electrode structure comprises a chip welding area, an insulating area and a tooth-shaped structure for connecting the chip welding area and the insulating area. The negative electrode structure is used for the semiconductor laser for micro-channel water-cooling packaging. And the chip welding area is provided with preset welding flux and is welded with the semiconductor laser chip during secondary sintering. And the insulating region is attached and fixed on the insulating layer of the semiconductor laser. The tooth-shaped structure is S-shaped and is connected with the chip welding area and the insulating area, the Smile effect of the semiconductor laser is improved by reducing the acting force of the negative electrode structure on the bar, the risks of bar cracking, poor welding and the like can be reduced, and the yield of devices is improved. 本发明公开了一种改善半导体激光器Smile效应的负极结构,包含芯片焊接区、绝缘