Preparation method of isolating layer of miniature transformer

The invention relates to a preparation method of an isolating layer of a miniature transformer. The preparation method comprises the following steps: selecting an N-type lt; 100 gt; the double-parabolic wafer is used as a substrate; evaporating a layer of aluminum on the double-parabolic wafer, and carrying out photoetching on the surface of the aluminum layer to form a photoetching pattern; putting the photoetched double-polished wafer into an aluminum corrosive liquid for corrosion, and removing a photoetched pattern on the surface of the double-polished wafer to obtain an aluminum layer; producing a layer of plasma oxidation film on the surface of the double-parabolic wafer, carrying out surface photoetching, and removing a photoetching pattern on the surface to obtain an oxidation layer; a layer of gold is evaporated on the surface of the double-polished wafer, surface photoetching is carried out, then the double-polished wafer is placed in a gold electroplating solution to be electroplated, and surface p