Failure analysis method and device of semiconductor structure and electronic equipment

The invention provides a failure analysis method of a semiconductor structure, which is applied to the technical field of semiconductors. Specifically, aiming at the problem of failure of a certain film of a semiconductor sample with a film structure made of a low-k medium, the conventional photographing condition in the prior art is modified into a large aperture and a CL1 condenser diaphragm, and the TEM photographing condition of the irradiation time is prolonged. Therefore, the temperature can be raised when the FIB sample is irradiated by utilizing high-pressure irradiation energy emitted by the TEM, and the temperature rise can cause the surface of the low k material film structure to shrink to generate tension, so that the problem that the adhesion of the film is poor is solved, namely the problem that the adhesion of the film is not good due to the conventional shooting condition adopted in the prior art is solved. And the failure problem of a relatively weak thin film interface existing on the thin f