High-potential energy taking circuit and semiconductor device control unit

The invention provides a high-potential energy taking circuit and a semiconductor device control unit. The high-potential energy taking circuit comprises a power unit, a full-bridge rectification circuit, a voltage amplitude limiting unit, a first diode, a first energy storage capacitor, a direct-direct isolation unit and a second energy storage capacitor, the power unit comprises a second damping capacitor and an energy taking capacitor, and the second damping capacitor and the energy taking capacitor are connected in series to form a series branch; the full-bridge rectification circuit comprises a first input end and a second input end, the first input end is connected with one end of the series branch, and the second input end is connected with the other end of the series branch; the anode of the first diode is connected with the positive polarity output end of the full-bridge rectifier circuit, the cathode of the first diode is connected with one end of the first energy storage capacitor, and the other en